No. |
Part Name |
Description |
Manufacturer |
61 |
28M0WS |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
62 |
28M0X |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
63 |
28M0XC |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
64 |
28M0XS |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
65 |
2N3954 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
66 |
2N3954A |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
67 |
2N3955 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
68 |
2N3956 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
69 |
2N3958 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
70 |
2N4044 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
71 |
2N4045 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
72 |
2N4100 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
73 |
2N4878 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
74 |
2N4879 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
75 |
2N4880 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
76 |
2N4987 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
77 |
2N4988 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
78 |
2N4989 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
79 |
2N4990 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
80 |
2N4991 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
81 |
2N4992 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
82 |
2N5905 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
83 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
84 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
85 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
86 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
87 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
88 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
89 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
90 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
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