No. |
Part Name |
Description |
Manufacturer |
91 |
2N4991 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
92 |
2N4992 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
93 |
2N5902 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
94 |
2N5903 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
95 |
2N5904 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
96 |
2N5905 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
97 |
2N5905 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
98 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
99 |
2N5906 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
100 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
101 |
2N5907 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
102 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
103 |
2N5908 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
104 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
105 |
2N5909 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
106 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
107 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
108 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
109 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
110 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
111 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
112 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
113 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
114 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
115 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
116 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
117 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
118 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
119 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
120 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
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