No. |
Part Name |
Description |
Manufacturer |
61 |
1N3155 |
Silicon Voltage Reference Diode 8.4V, Mil Type USN/JAN |
Transitron Electronic |
62 |
1N3156 |
Silicon Voltage Reference Diode 8.4V, Mil Type USN/JAN |
Transitron Electronic |
63 |
1N3157 |
Silicon Voltage Reference Diode 8.4V, Mil Type USN/JAN |
Transitron Electronic |
64 |
1N429 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USAF/JAN |
Transitron Electronic |
65 |
1N4383GP |
200 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
66 |
1N4384GP |
400 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
67 |
1N4385GP |
600 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
68 |
1N4585GP |
800 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
69 |
1N4586GP |
1000 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
70 |
1N5391G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
Jinan Gude Electronic Device |
71 |
1N5391G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
Jinan Gude Electronic Device |
72 |
1N5392G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
Jinan Gude Electronic Device |
73 |
1N5392G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
Jinan Gude Electronic Device |
74 |
1N5393G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. |
Jinan Gude Electronic Device |
75 |
1N5393G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. |
Jinan Gude Electronic Device |
76 |
1N5395G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
Jinan Gude Electronic Device |
77 |
1N5395G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
Jinan Gude Electronic Device |
78 |
1N5397G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
Jinan Gude Electronic Device |
79 |
1N5397G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
Jinan Gude Electronic Device |
80 |
1N5398G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
Jinan Gude Electronic Device |
81 |
1N5398G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
Jinan Gude Electronic Device |
82 |
1N5399G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
Jinan Gude Electronic Device |
83 |
1N5399G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
Jinan Gude Electronic Device |
84 |
1N5614 |
200 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
85 |
1N5616 |
400 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
86 |
1N5618 |
600 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
87 |
1N5620 |
800 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
88 |
1N5622 |
1000 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
89 |
1N746 |
500 mW silicon linear diode. Max zener impedance 28.0 Ohm, max zener voltage 3.3 V (Iz 20mA). |
Fairchild Semiconductor |
90 |
1N747 |
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). |
Fairchild Semiconductor |
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