| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N5399G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
Jinan Gude Electronic Device |
| 92 |
1N5399G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
Jinan Gude Electronic Device |
| 93 |
1N5614 |
200 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
| 94 |
1N5616 |
400 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
| 95 |
1N5618 |
600 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
| 96 |
1N5620 |
800 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
| 97 |
1N5622 |
1000 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
| 98 |
1N746 |
500 mW silicon linear diode. Max zener impedance 28.0 Ohm, max zener voltage 3.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 99 |
1N747 |
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 100 |
1N748 |
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). |
Fairchild Semiconductor |
| 101 |
1N749 |
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 102 |
1N750 |
500 mW silicon linear diode. Max zener impedance 19.0 Ohm, max zener voltage 4.7 V (Iz 20mA). |
Fairchild Semiconductor |
| 103 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 104 |
1N752 |
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 105 |
1N753 |
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 106 |
1N754 |
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). |
Fairchild Semiconductor |
| 107 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
| 108 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 109 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 110 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 111 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 112 |
1N821 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 113 |
1N823 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 114 |
1N825 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 115 |
1N827 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 116 |
1N829 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 117 |
1N935B |
Silicon Voltage Reference Diode temperature compensated 9.0V, Military Version USN/JAN |
Transitron Electronic |
| 118 |
1N937B |
Silicon Voltage Reference Diode 9.0V, Mil Type USN/JAN |
Transitron Electronic |
| 119 |
1N938B |
Silicon Voltage Reference Diode 9.0V, Mil Type USN/JAN |
Transitron Electronic |
| 120 |
1S1650 |
Silicon planar variable capacitance diode, suitable for Radio Tunner, Multiplier and Oscillator |
TOSHIBA |
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