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Datasheets for , M

Datasheets found :: 14850
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No. Part Name Description Manufacturer
91 1N748 500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). Fairchild Semiconductor
92 1N749 500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). Fairchild Semiconductor
93 1N750 500 mW silicon linear diode. Max zener impedance 19.0 Ohm, max zener voltage 4.7 V (Iz 20mA). Fairchild Semiconductor
94 1N751 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). Fairchild Semiconductor
95 1N752 500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). Fairchild Semiconductor
96 1N753 500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). Fairchild Semiconductor
97 1N754 500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). Fairchild Semiconductor
98 1N755 500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). Fairchild Semiconductor
99 1N756 500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). Fairchild Semiconductor
100 1N757 500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). Fairchild Semiconductor
101 1N758 500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). Fairchild Semiconductor
102 1N759 500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). Fairchild Semiconductor
103 1N821 Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN Transitron Electronic
104 1N823 Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN Transitron Electronic
105 1N825 Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN Transitron Electronic
106 1N827 Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN Transitron Electronic
107 1N829 Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN Transitron Electronic
108 1N935B Silicon Voltage Reference Diode temperature compensated 9.0V, Military Version USN/JAN Transitron Electronic
109 1N937B Silicon Voltage Reference Diode 9.0V, Mil Type USN/JAN Transitron Electronic
110 1N938B Silicon Voltage Reference Diode 9.0V, Mil Type USN/JAN Transitron Electronic
111 1S1650 Silicon planar variable capacitance diode, suitable for Radio Tunner, Multiplier and Oscillator TOSHIBA
112 1S1651 Silicon planar variable capacitance diode, suitable for Radio Tunner, Multiplier and Oscillator TOSHIBA
113 1S2076 Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V Hitachi Semiconductor
114 1S2076A Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V Hitachi Semiconductor
115 1SS345 UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier Diode SANYO
116 1SS350 UHF Detector, Mixer Applications Silicon Epitaxial Schottky Barrier Diode SANYO
117 1SS351 Silicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications SANYO
118 2001 1 W, 28 V, 2000 MHz, microwave CW bipolar Acrian
119 2001-2 1 W, 28 V, 2000 MHz, microwave CW bipolar Acrian
120 2003-2 3 W, 28 V, 2000 MHz, microwave CW bipolar Acrian


Datasheets found :: 14850
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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