| No. |
Part Name |
Description |
Manufacturer |
| 61 |
274003 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 3. Nominal resistance cold 0.0275 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 62 |
274004 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 4. Nominal resistance cold 0.0202 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 63 |
274005 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 5. Nominal resistance cold 0.0156 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 64 |
27401.5 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1 1/2. Nominal resistance cold 0.0578 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 65 |
2N3375 |
R.F. power transistor |
Mullard |
| 66 |
2N3553 |
R.F. power transistor |
Mullard |
| 67 |
2N3632 |
R.F. power transistor |
Mullard |
| 68 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
| 69 |
2N3866 |
R.F. power transistor |
Mullard |
| 70 |
2N4427 |
R.F. power transistor |
Mullard |
| 71 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 72 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 73 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 74 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 75 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 76 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 77 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 78 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 79 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 80 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 81 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 82 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 83 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 84 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 85 |
2SA1803 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 86 |
2SA1869 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 87 |
2SA1939 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 88 |
2SA2126 |
Bipolar Transistor -50V -3A VCE(sat);-270mV max. PNP Single TP/TP-FA |
ON Semiconductor |
| 89 |
2SB1018A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 90 |
2SB1578 |
Low freq. power amp., medium-speed switching transistor |
NEC |
| | | |
