| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2SB1602 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 92 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 93 |
2SC4688 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 94 |
2SC4935 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) . POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 95 |
2SC5000 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE . POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 96 |
2SC5196 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE . POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 97 |
2SC830 |
Silicon NPN Triple Diffused Transistor, intended for use in HiFi Amp. Power Output |
Hitachi Semiconductor |
| 98 |
2SD1091 |
Si NPN triple diffused planar darlington. Power amplifier. |
Panasonic |
| 99 |
2SD1509 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS, SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 100 |
2SD1843 |
Low-freq. power amp., low-speed switching power tr. |
NEC |
| 101 |
2SD1843-T |
Low-freq. power amp., low-speed switching power tr. |
NEC |
| 102 |
2SD2425 |
Low freq. power amp., medium-speed switching transistor |
NEC |
| 103 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 104 |
2SD553 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 105 |
2SD804 |
Si NPN triple diffused junction mesa. Power amplifier. |
Panasonic |
| 106 |
2SD866A |
Si NPN epitaxial planar. Power switching. |
Panasonic |
| 107 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 108 |
379BLY |
R.F. power transistor |
Mullard |
| 109 |
380BGY |
Broad band R.F. power module |
Mullard |
| 110 |
381BGY |
Broad band R.F. power module |
Mullard |
| 111 |
542BLY |
R.F. power transistor |
Mullard |
| 112 |
5KP100 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 113 |
5KP100A |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 114 |
5KP100C |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 115 |
5KP100CA |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 116 |
5KP110 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 149 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 117 |
5KP110A |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 118 |
5KP110C |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 149 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 119 |
5KP110CA |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 120 |
810BLY/A |
R.F. power transistor |
Mullard |
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