| No. |
Part Name |
Description |
Manufacturer |
| 61 |
374120000 |
UL 248-14 / 250V / T |
WICKMANN USA |
| 62 |
374120041 |
UL 248-14 / 250V / T |
WICKMANN USA |
| 63 |
5KP25A |
Diode TVS Single Uni-Dir 250V 5KW 2-Pin Case P600 Bulk |
New Jersey Semiconductor |
| 64 |
ARF1501 |
RF POWER MOSFET 250V 1500W 40MHz |
Advanced Power Technology |
| 65 |
ARF446 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 250W 65MHz |
Advanced Power Technology |
| 66 |
ARF447 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 250W 65MHz |
Advanced Power Technology |
| 67 |
ARF461A |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 150W 65MHz |
Advanced Power Technology |
| 68 |
ARF461B |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 150W 65MHz |
Advanced Power Technology |
| 69 |
AUIRF7799L2 |
A 250V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 125 amperes optimized with low on resistance |
International Rectifier |
| 70 |
AUIRF7799L2TR |
A 250V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 125 amperes optimized with low on resistance |
International Rectifier |
| 71 |
AUIRFR4292 |
Automotive Q101 250V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 72 |
AUIRFR4292TRR |
Automotive Q101 250V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 73 |
AUIRFU4292 |
Automotive Q101 250V Single N-Channel HEXFET Power MOSFET in a I-Pak Package |
International Rectifier |
| 74 |
BAS21M3 |
250V HIGH VOLTAGE SWITCHING DIODE |
ON Semiconductor |
| 75 |
BD157 |
20.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
| 76 |
BF258 |
1.000W General Purpose NPN Metal Can Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 77 |
BF258 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 78 |
BF392 |
1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25 - 0 hFE |
Continental Device India Limited |
| 79 |
BF415 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-126 |
New Jersey Semiconductor |
| 80 |
BF416 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-126 |
New Jersey Semiconductor |
| 81 |
BF422 |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 82 |
BF422 |
Trans GP BJT NPN 250V 0.1A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 83 |
BF422BPL |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 84 |
BF423 |
0.800W High Voltage PNP Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 85 |
BF458 |
10.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.100A Ic, 25 hFE. |
Continental Device India Limited |
| 86 |
BF458 |
Trans GP BJT NPN 250V 0.3A 3-Pin TO-126 |
New Jersey Semiconductor |
| 87 |
BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470 |
Continental Device India Limited |
| 88 |
BF469 |
Trans GP BJT NPN 250V 0.05A 3-Pin TO-126 |
New Jersey Semiconductor |
| 89 |
BF470 |
2.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF469 |
Continental Device India Limited |
| 90 |
BF470 |
Trans GP BJT PNP 250V 0.05A 3-Pin TO-126 |
New Jersey Semiconductor |
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