| No. |
Part Name |
Description |
Manufacturer |
| 91 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 92 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 93 |
BFT28C |
Trans GP BJT PNP 250V 1A 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 94 |
BSS72 |
Trans GP BJT NPN 250V 0.5A 3-Pin TO-18 |
New Jersey Semiconductor |
| 95 |
BUR52 |
Trans GP BJT NPN 250V 60A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 96 |
BUV12 |
20A NPN silicon power metal transistor 250V 150W SWITCHMODE series |
Motorola |
| 97 |
BUV22 |
Power 40A 250V NPN TO204 |
ON Semiconductor |
| 98 |
BUV42 |
Trans GP BJT NPN 250V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 99 |
BUX22 |
Trans GP BJT NPN 250V 40A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 100 |
BUY56 |
Trans GP BJT NPN 250V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 101 |
BUY70C |
Trans GP BJT NPN 250V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 102 |
C1658 |
Approved for use with Conexant ADSL Chip Set Meets requirements of IEC950 for supplementary insulation, 250V working voltage |
CoEv Inc |
| 103 |
C1676 |
Approved for use with GlobeSpan HDSL2 Chip Set Meets the requirements of IEC60950 for supplementary insulation, 250V working voltage |
CoEv Inc |
| 104 |
C2042 |
Analog Devices AD20MSP930 CPE Line Transformer Meet requirements of IEC60950 for supplementary insulation, 250V working voltage |
CoEv Inc |
| 105 |
C2852 |
ADSL Coupling Transformer, IEC950 Supplementary 250V 850UH, 1:1 (Line : IC), GW CEP 7 |
Tyco Electronics |
| 106 |
CIL9263 |
1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.100A Ic, 75 - hFE |
Continental Device India Limited |
| 107 |
CJF15032 |
50.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE. |
Continental Device India Limited |
| 108 |
CJF15033 |
50.000W Medium Power PNP Plastic Leaded Transistor. 250V Vceo, 2.000A Ic, 50 hFE. |
Continental Device India Limited |
| 109 |
CSC1573 |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 30 - 220 hFE. |
Continental Device India Limited |
| 110 |
CSC1573P |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 30 - 100 hFE. |
Continental Device India Limited |
| 111 |
CSC1573Q |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 112 |
CSC1573R |
1.000W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.070A Ic, 100 - 220 hFE. |
Continental Device India Limited |
| 113 |
DGS10-025A |
250V gallium arsenide schottky rectifier |
IXYS |
| 114 |
DGS10-025AS |
250V gallium arsenide schottky rectifier |
IXYS |
| 115 |
DGS20-025A |
250V gallium arsenide schottky rectifier |
IXYS |
| 116 |
DGSK20-025A |
250V gallium arsenide schottky rectifier |
IXYS |
| 117 |
DGSK20-025AS |
250V gallium arsenide schottky rectifier |
IXYS |
| 118 |
DGSK40-025A |
250V gallium arsenide schottky rectifier |
IXYS |
| 119 |
DMP25H18DLFDE |
250V P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
| 120 |
DMP25H18DLFDE-13 |
250V P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
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