| No. |
Part Name |
Description |
Manufacturer |
| 61 |
IRF733 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 62 |
IRFF311 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
| 63 |
IRFF313 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
| 64 |
LT211 |
Photo DMOS-FET relay. Input continuous LED current 50 mA, input peak LED current 1000 mA, input LED reverse voltage 5 V. Output load voltage 350 V, output load current 120 mA. |
Letex Technology |
| 65 |
MGB15N35CL |
Ignition IGBT 15 Amps, 350 Volts |
ON Semiconductor |
| 66 |
MGB15N35CLT4 |
Ignition IGBT 15 Amps, 350 Volts |
ON Semiconductor |
| 67 |
MGB19N35CL |
Ignition IGBT 19 Amps, 350 Volts |
ON Semiconductor |
| 68 |
MGB19N35CLT4 |
Ignition IGBT 19 Amps, 350 Volts |
ON Semiconductor |
| 69 |
MGP15N35CL |
Ignition IGBT 15 Amps, 350 Volts |
ON Semiconductor |
| 70 |
MGP15N35CL-D |
Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK |
ON Semiconductor |
| 71 |
MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts |
ON Semiconductor |
| 72 |
MGP19N35CL-D |
Ignition IGBT 19 Amps, 350 Volts N-Channel TO-220 and D2PAK |
ON Semiconductor |
| 73 |
MJ10000 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS |
Motorola |
| 74 |
MJE2360T |
0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS |
Motorola |
| 75 |
MJE2361T |
0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS |
Motorola |
| 76 |
MJE3439 |
0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS |
Motorola |
| 77 |
MJH6677 |
NPN silicon power transistor. 15 A, 350 V, 125 W. |
Motorola |
| 78 |
MTM5N35 |
N-Channel Power MOSFETs, 5.5A, 350 V/400V |
Fairchild Semiconductor |
| 79 |
MTM5N40 |
N-Channel Power MOSFETs, 5.5A, 350 V/400V |
Fairchild Semiconductor |
| 80 |
MTP5N35 |
N-Channel Power MOSFETs, 5.5A, 350 V/400V |
Fairchild Semiconductor |
| 81 |
MTP5N40 |
N-Channel Power MOSFETs, 5.5A, 350 V/400V |
Fairchild Semiconductor |
| 82 |
NGB8206N |
Ignition IGBT, N-Channel, 20 A, 350 V, D2PAK |
ON Semiconductor |
| 83 |
NGD8205N |
Ignition IGBT, N-Channel, 20 A, 350 V, DPAK |
ON Semiconductor |
| 84 |
P4KE350 |
350 V, 1 mA, 400 W, transient voltage suppressor |
Leshan Radio Company |
| 85 |
P4KE350 |
350 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 86 |
P4KE350A |
350 V, 1 mA, 400 W, transient voltage suppressor |
Leshan Radio Company |
| 87 |
P4KE350A |
350 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 88 |
P4KE350C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. Bidirectional. |
Jinan Gude Electronic Device |
| 89 |
P4KE350C |
350 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 90 |
P4KE350CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. Bidirectional. |
Jinan Gude Electronic Device |
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