| No. |
Part Name |
Description |
Manufacturer |
| 91 |
P4KE350CA |
350 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 92 |
P6KE350 |
350 V, 1 mA, 600 W, transient voltage suppressor |
Leshan Radio Company |
| 93 |
P6KE350 |
350 V, 600 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 94 |
P6KE350A |
350 V, 1 mA, 600 W, transient voltage suppressor |
Leshan Radio Company |
| 95 |
P6KE350A |
350 V, 600 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 96 |
P6KE350C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. Bidirectional. |
Jinan Gude Electronic Device |
| 97 |
P6KE350C |
350 V, 600 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 98 |
P6KE350CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. Bidirectional. |
Jinan Gude Electronic Device |
| 99 |
P6KE350CA |
350 V, 600 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 100 |
SDR809 |
350 V, 100 A ultra fast recovery rectifier |
Solid State Devices Inc |
| 101 |
TIP151 |
350 V, 10 A, 80 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
| 102 |
TIP151 |
350 V, 10 A, NPN silicon power darlington |
TRANSYS Electronics Limited |
| 103 |
TIP161 |
350 V, 10 A, 50 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
| 104 |
TIP161 |
350 V, 10 A, NPN silicon power darlington |
TRANSYS Electronics Limited |
| 105 |
VP0535N3 |
-350 V, 75 om, P-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
| 106 |
VP0535ND |
-350 V, 75 om, P-channel enhancement-mode D-MOS FET |
Topaz Semiconductor |
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