Datasheets for 651

Datasheets found :: 2995

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No.	Part Name	Description	Manufacturer
61	2N6515	0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE	Continental Device India Limited
62	2N6515	NPN Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
63	2N6515	Ic=500mA, Vce=10V transistor	MCC
64	2N6515	High Voltage Transistor 625mW	Micro Commercial Components
65	2N6515	High voltage NPN transistor	Motorola
66	2N6515	High Voltage Transistors	ON Semiconductor
67	2N6515	NPN Epitaxial Silicon High Voltage Transistor	Samsung Electronic
68	2N6515	High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.	USHA India LTD
69	2N6515-D	High Voltage Transistors	ON Semiconductor
70	2N6515RLRM	High Voltage Transistors	ON Semiconductor
71	2N6516	Leaded Small Signal Transistor General Purpose	Central Semiconductor
72	2N6516	0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE	Continental Device India Limited
73	2N6516	NPN Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
74	2N6516	High voltage NPN transistor	Motorola
75	2N6516	NPN EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
76	2N6516	High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.	USHA India LTD
77	2N6517	Leaded Small Signal Transistor General Purpose	Central Semiconductor
78	2N6517	0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE	Continental Device India Limited
79	2N6517	NPN Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
80	2N6517	Ic=500mA, Vce=10V transistor	MCC
81	2N6517	High Voltage Transistor 625mW	Micro Commercial Components
82	2N6517	High voltage NPN transistor	Motorola
83	2N6517	High Voltage Transistors	ON Semiconductor
84	2N6517	NPN EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
85	2N6517	High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW.	USHA India LTD
86	2N6517	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR	Zetex Semiconductors
87	2N6517BU	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
88	2N6517CBU	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
89	2N6517CTA	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
90	2N6517RLRA	High Voltage Transistors	ON Semiconductor

Datasheets found :: 2995

Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |