Datasheets for 651

Datasheets found :: 2995

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No.	Part Name	Description	Manufacturer
91	2N6517RLRP	High Voltage Transistors	ON Semiconductor
92	2N6517TA	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
93	2N6518	Leaded Small Signal Transistor General Purpose	Central Semiconductor
94	2N6518	PNP Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
95	2N6518	High voltage PNP transistor	Motorola
96	2N6518	PNP EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
97	2N6518	High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W.	USHA India LTD
98	2N6518BU	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
99	2N6518TA	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
100	2N6519	Leaded Small Signal Transistor General Purpose	Central Semiconductor
101	2N6519	0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE	Continental Device India Limited
102	2N6519	PNP Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
103	2N6519	Ic=500mA, Vce=10V transistor	MCC
104	2N6519	High Voltage Transistor 625mW	Micro Commercial Components
105	2N6519	High voltage PNP transistor	Motorola
106	2N6519	High Voltage Transistors	ON Semiconductor
107	2N6519	PNP EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
108	2N6519	High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W.	USHA India LTD
109	2N6519BU	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
110	2N6519RLRA	High Voltage Transistors	ON Semiconductor
111	2N6519TA	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
112	2N651A	PNP Germanium transistor in the audio-frequency range applications	Motorola
113	2N651A	Germanium PNP Transistor	Motorola
114	2N651A	Trans GP BJT PNP 0.5A	New Jersey Semiconductor
115	2SA1651	Silicon PNP Power Transistors TO-220Fa package	Savantic
116	2SA651	Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1	New Jersey Semiconductor
117	2SB1651	For low-frequency and low-noise amplification	Panasonic
118	2SC1651S	Transistors > Small Signal Bipolar Transistors(up to 0.6W)	ROHM
119	2SC3651	High Gain, Low Frequency, General Purpose NPN Amplifier Transistor	ON Semiconductor
120	2SC3651	NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications	SANYO

Datasheets found :: 2995

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