No. |
Part Name |
Description |
Manufacturer |
61 |
1N5254A |
27 V, 4.6 mA, zener diode |
Leshan Radio Company |
62 |
1N5254AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 27 V. Tolerance +-10%. |
Microsemi |
63 |
1N5254BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 27 V. Tolerance +-5%. |
Microsemi |
64 |
1N5254C |
27 V, 4.6 mA, zener diode |
Leshan Radio Company |
65 |
1N5254D |
27 V, 4.6 mA, zener diode |
Leshan Radio Company |
66 |
1N5254UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 27 V. |
Microsemi |
67 |
1N5261A |
47 V, 2.7 mA, zener diode |
Leshan Radio Company |
68 |
1N5261AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 47 V. Tolerance +-10%. |
Microsemi |
69 |
1N5261BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 47 V. Tolerance +-5%. |
Microsemi |
70 |
1N5261C |
47 V, 2.7 mA, zener diode |
Leshan Radio Company |
71 |
1N5261D |
47 V, 2.7 mA, zener diode |
Leshan Radio Company |
72 |
1N5261UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 47 V. |
Microsemi |
73 |
1N5269A |
87 V, 1.4 mA, zener diode |
Leshan Radio Company |
74 |
1N5269AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 87 V. Tolerance +-10%. |
Microsemi |
75 |
1N5269BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 87 V. Tolerance +-5%. |
Microsemi |
76 |
1N5269C |
87 V, 1.4 mA, zener diode |
Leshan Radio Company |
77 |
1N5269D |
87 V, 1.4 mA, zener diode |
Leshan Radio Company |
78 |
1N5269UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 87 V. |
Microsemi |
79 |
1N5345B |
8.7 V, 150 mA, 5 W glass passivated zener diode |
Fagor |
80 |
1N5354B |
17 V, 70 mA, 5 W glass passivated zener diode |
Fagor |
81 |
1N5354B |
17 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
82 |
1N5361B |
27 V, 50 mA, 5 W glass passivated zener diode |
Fagor |
83 |
1N5361B |
27 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
84 |
1N5368B |
47 V, 25 mA, 5 W glass passivated zener diode |
Fagor |
85 |
1N5368B |
47 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
86 |
1N5376B |
87 V, 15 mA, 5 W glass passivated zener diode |
Fagor |
87 |
1N5376B |
87 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
88 |
1N5522A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
89 |
1N5522B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
90 |
1N568 |
7 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| | | |