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Datasheets for 7 V

Datasheets found :: 2053
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 1N5254A 27 V, 4.6 mA, zener diode Leshan Radio Company
62 1N5254AUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 27 V. Tolerance +-10%. Microsemi
63 1N5254BUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 27 V. Tolerance +-5%. Microsemi
64 1N5254C 27 V, 4.6 mA, zener diode Leshan Radio Company
65 1N5254D 27 V, 4.6 mA, zener diode Leshan Radio Company
66 1N5254UR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 27 V. Microsemi
67 1N5261A 47 V, 2.7 mA, zener diode Leshan Radio Company
68 1N5261AUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 47 V. Tolerance +-10%. Microsemi
69 1N5261BUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 47 V. Tolerance +-5%. Microsemi
70 1N5261C 47 V, 2.7 mA, zener diode Leshan Radio Company
71 1N5261D 47 V, 2.7 mA, zener diode Leshan Radio Company
72 1N5261UR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 47 V. Microsemi
73 1N5269A 87 V, 1.4 mA, zener diode Leshan Radio Company
74 1N5269AUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 87 V. Tolerance +-10%. Microsemi
75 1N5269BUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 87 V. Tolerance +-5%. Microsemi
76 1N5269C 87 V, 1.4 mA, zener diode Leshan Radio Company
77 1N5269D 87 V, 1.4 mA, zener diode Leshan Radio Company
78 1N5269UR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 87 V. Microsemi
79 1N5345B 8.7 V, 150 mA, 5 W glass passivated zener diode Fagor
80 1N5354B 17 V, 70 mA, 5 W glass passivated zener diode Fagor
81 1N5354B 17 V, 5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
82 1N5361B 27 V, 50 mA, 5 W glass passivated zener diode Fagor
83 1N5361B 27 V, 5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
84 1N5368B 47 V, 25 mA, 5 W glass passivated zener diode Fagor
85 1N5368B 47 V, 5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
86 1N5376B 87 V, 15 mA, 5 W glass passivated zener diode Fagor
87 1N5376B 87 V, 5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
88 1N5522A 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-10% tolerance. Jinan Gude Electronic Device
89 1N5522B 0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-5% tolerance. Jinan Gude Electronic Device
90 1N568 7 V, 500 mA, gold bonded germanium diode BKC International Electronics


Datasheets found :: 2053
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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