No. |
Part Name |
Description |
Manufacturer |
91 |
1N5935B |
27 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
92 |
1N5941 |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
93 |
1N5941A |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
94 |
1N5941B |
47 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
95 |
1N5941C |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
96 |
1N5941D |
1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
97 |
1N6281 |
27 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
98 |
1N6281A |
27 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
99 |
1N6281C |
27 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
100 |
1N6281CA |
27 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
101 |
1N6287 |
47 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
102 |
1N6287A |
47 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
103 |
1N6287C |
47 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
104 |
1N6287CA |
47 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
105 |
1N750 |
4.7 V, 400 mW silicon linear diode |
BKC International Electronics |
106 |
1N750 |
500 mW silicon linear diode. Max zener impedance 19.0 Ohm, max zener voltage 4.7 V (Iz 20mA). |
Fairchild Semiconductor |
107 |
1N750 |
400mW, 4.7 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
108 |
1N750A |
4.7 V, 400 mW silicon linear diode |
BKC International Electronics |
109 |
1N750A |
500mW, silicon zener diode. Zener voltage 4.7 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
110 |
1N750A-1 |
4.7 V, 400 mW silicon zener diode |
BKC International Electronics |
111 |
1N750B |
4.7 V, 20 mA, zener diode |
Leshan Radio Company |
112 |
1N750C |
500mW, silicon zener diode. Zener voltage 4.7 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
113 |
1N750C |
4.7 V, 20 mA, zener diode |
Leshan Radio Company |
114 |
1N750D |
500mW, silicon zener diode. Zener voltage 4.7 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
115 |
1N750D |
4.7 V, 20 mA, zener diode |
Leshan Radio Company |
116 |
1N941 |
11.7 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
117 |
1N941A |
11.7 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
118 |
1N941B-1 |
11.7 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
119 |
1N942 |
11.7 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
120 |
1N942A |
11.7 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
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