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Datasheets for E O

Datasheets found :: 88436
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No. Part Name Description Manufacturer
61 21-0147C PACKAGE OUTLINE, 6L UDFN, 1.5 X 1.0 X 0.8mm MAXIM - Dallas Semiconductor
62 24AA32A The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r Microchip
63 26LS31 QUAD EIA.422 LINE DRIVER WITH THREE.STATE OUTPUTS Motorola
64 26LS32 QUAD EIA-422/3 LINE RECEIVER WITH THREE.STATE OUTPUTS Motorola
65 29LS18 Quad D Register With Standard and Three-State Outputs Monolithic Memories
66 2B23 Programmable Output, Isolated Voltage-to-Current Converter Intronics
67 2N2369A NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications Motorola
68 2N4932 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
69 2N4933 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
70 2N5431 Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits Motorola
71 2N5441 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. Motorola
72 2N5442 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. Motorola
73 2N5443 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. Motorola
74 2N5444 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. Motorola
75 2N5445 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. Motorola
76 2N5446 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. Motorola
77 2N5470 The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note RCA Solid State
78 2N6072 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
79 2N6072A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
80 2N6072B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
81 2N6073 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. Motorola
82 2N6074 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
83 2N6074A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
84 2N6074B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
85 2N6075 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. Motorola
86 2N6718L Mini size of Discrete semiconductor elements SINYORK
87 2SA1235A 200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 Isahaya Electronics Corporation
88 2SB1357 Transistor PNP (low collector saturation voltage wide safe operation area) ROHM
89 2SC2951 The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. Advanced Semiconductor
90 2SC3381 NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) TOSHIBA


Datasheets found :: 88436
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