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Datasheets for E O

Datasheets found :: 89600
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No. Part Name Description Manufacturer
91 2N2369A NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications Motorola
92 2N4932 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
93 2N4933 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
94 2N5431 Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits Motorola
95 2N5441 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. Motorola
96 2N5442 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. Motorola
97 2N5443 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. Motorola
98 2N5444 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. Motorola
99 2N5445 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. Motorola
100 2N5446 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. Motorola
101 2N5470 The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note RCA Solid State
102 2N6072 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
103 2N6072A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
104 2N6072B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
105 2N6073 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. Motorola
106 2N6074 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
107 2N6074A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
108 2N6074B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
109 2N6075 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. Motorola
110 2N6618 NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 Motorola
111 2N6679 NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 Motorola
112 2N6718L Mini size of Discrete semiconductor elements SINYORK
113 2SA1235A 200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 Isahaya Electronics Corporation
114 2SB1357 Transistor PNP (low collector saturation voltage wide safe operation area) ROHM
115 2SC1399 NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching NEC
116 2SC2951 The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. Advanced Semiconductor
117 2SC3381 NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) TOSHIBA
118 2SC3928A 200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 Isahaya Electronics Corporation
119 2SC4155A 150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 Isahaya Electronics Corporation
120 2SD1092 NPN DOUBLE DIFFUSED TYPE (POWER REGULATOR FOR LINE OPERATED TV) TOSHIBA


Datasheets found :: 89600
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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