No. |
Part Name |
Description |
Manufacturer |
91 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
92 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
93 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
94 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
95 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
96 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
97 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
98 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
99 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
100 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
101 |
2N5470 |
The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note |
RCA Solid State |
102 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
103 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
104 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
105 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
106 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
107 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
108 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
109 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
110 |
2N6618 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
111 |
2N6679 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
112 |
2N6718L |
Mini size of Discrete semiconductor elements |
SINYORK |
113 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
114 |
2SB1357 |
Transistor PNP (low collector saturation voltage wide safe operation area) |
ROHM |
115 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
116 |
2SC2951 |
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
Advanced Semiconductor |
117 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
118 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
119 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
120 |
2SD1092 |
NPN DOUBLE DIFFUSED TYPE (POWER REGULATOR FOR LINE OPERATED TV) |
TOSHIBA |
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