| No. |
Part Name |
Description |
Manufacturer |
| 61 |
GT20J321 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 62 |
GT20J341 |
Discrete IGBT |
TOSHIBA |
| 63 |
GT250 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 64 |
GT250/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| 65 |
GT250/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
| 66 |
GT250/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
| 67 |
GT250/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
| 68 |
GT250/6 |
Silicon NPN Very High Power Darlington Transistor 600V |
IPRS Baneasa |
| 69 |
GT250/7 |
Silicon NPN Very High Power Darlington Transistor 700V |
IPRS Baneasa |
| 70 |
GT250/8 |
Silicon NPN Very High Power Darlington Transistor 800V |
IPRS Baneasa |
| 71 |
GT250/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
| 72 |
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 73 |
GT25G101(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 74 |
GT25G101SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 75 |
GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 76 |
GT25G102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 77 |
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 78 |
GT25J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 79 |
GT25J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 80 |
GT25Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 81 |
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 82 |
GT25Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 83 |
GT28F008B3B110 |
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
| 84 |
GT28F008B3B110 |
3 Volt Advanced Boot Block Flash Memory |
Intel |
| 85 |
GT28F008B3B120 |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
Intel |
| 86 |
GT28F008B3B150 |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
Intel |
| 87 |
GT28F008B3B90 |
3 Volt Advanced Boot Block Flash Memory |
Intel |
| 88 |
GT28F008B3B90 |
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
| 89 |
GT28F008B3BA110 |
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
| 90 |
GT28F008B3BA90 |
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
| | | |
