No. |
Part Name |
Description |
Manufacturer |
91 |
GT250C/5 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
92 |
GT250C/6 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
93 |
GT250C/7 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
94 |
GT250C/8 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
95 |
GT250C/9 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
96 |
GT250D/10 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
97 |
GT250D/3 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
98 |
GT250D/4 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
99 |
GT250D/5 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
100 |
GT250D/6 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
101 |
GT250D/7 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
102 |
GT250D/8 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
103 |
GT250D/9 |
Silicon high-voltage switching giant darlington transistor |
IPRS Baneasa |
104 |
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
105 |
GT25G101(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
106 |
GT25G101SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
107 |
GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
108 |
GT25G102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
109 |
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
110 |
GT25J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
111 |
GT25J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
112 |
GT25Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
113 |
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
114 |
GT25Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
115 |
GT28F008B3B110 |
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
116 |
GT28F008B3B110 |
3 Volt Advanced Boot Block Flash Memory |
Intel |
117 |
GT28F008B3B120 |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
Intel |
118 |
GT28F008B3B150 |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
Intel |
119 |
GT28F008B3B90 |
3 Volt Advanced Boot Block Flash Memory |
Intel |
120 |
GT28F008B3B90 |
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
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