| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N3799X |
PNP, LOW NOISE AMPLIFIER TRANSISTOR |
SemeLAB |
| 62 |
2N3838 |
Complementary Dual Amplifier Transistor |
Motorola |
| 63 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 64 |
2N3903 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 65 |
2N3904 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 66 |
2N3905 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 67 |
2N3906 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 68 |
2N3930 |
High voltage amplifier transistor |
SGS-ATES |
| 69 |
2N3931 |
High voltage amplifier transistor |
SGS-ATES |
| 70 |
2N3962 |
Low level amplifier transistor |
SGS-ATES |
| 71 |
2N3963 |
Low level amplifier transistor |
SGS-ATES |
| 72 |
2N3964 |
Low level amplifier transistor |
SGS-ATES |
| 73 |
2N3965 |
Low level amplifier transistor |
SGS-ATES |
| 74 |
2N4123 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 75 |
2N4124 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 76 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 77 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 78 |
2N4126 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 79 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 80 |
2N4248 |
PNP Silicon Low-Level, Low-Noise amplifier transistor |
ITT Semiconductors |
| 81 |
2N4249 |
PNP Silicon Low-Level, Low-Noise amplifier transistor |
ITT Semiconductors |
| 82 |
2N4250 |
PNP Silicon Low-Level, Low-Noise amplifier transistor |
ITT Semiconductors |
| 83 |
2N4358 |
High voltage amplifier transistor |
SGS-ATES |
| 84 |
2N4410 |
Amplifier Transistor(NPN Silicon) |
ON Semiconductor |
| 85 |
2N4410-D |
Amplifier Transistor NPN Silicon |
ON Semiconductor |
| 86 |
2N4854 |
Complementary dual amplifier transistor NPN/PNP silicon |
Motorola |
| 87 |
2N4855 |
Complementary dual amplifier transistor NPN/PNP silicon |
Motorola |
| 88 |
2N5086 |
Low-Level, Low-Noise PNP Silicon Amplifier Transistor |
ITT Semiconductors |
| 89 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 90 |
2N5087 |
Low-Power General Purpose PNP Silicon Amplifier Transistor |
ITT Semiconductors |
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