| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 92 |
2N5209 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 93 |
2N5209 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 94 |
2N5209-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 95 |
2N5209RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
| 96 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
| 97 |
2N5210 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 98 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 99 |
2N5210RLRA |
Amplifier Transistor NPN |
ON Semiconductor |
| 100 |
2N5220 |
Low-Power general purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 101 |
2N5221 |
Low-Power General purpose PNP silicon amplifier transistor |
ITT Semiconductors |
| 102 |
2N5223 |
Low-Level General purpose NPN silicon amplifier transistor |
ITT Semiconductors |
| 103 |
2N5225 |
Medium power NPN silicon amplifier transistor |
ITT Semiconductors |
| 104 |
2N5226 |
Medium Power PNP Silicon Amplifier transistor |
ITT Semiconductors |
| 105 |
2N5227 |
General purpose PNP Silicon Low-Level amplifier transistor |
ITT Semiconductors |
| 106 |
2N5400 |
AMPLIFIER TRANSISTOR PNP SILICON |
Boca Semiconductor Corporation |
| 107 |
2N5400 |
Amplifier Transistor(PNP Silicon) |
ON Semiconductor |
| 108 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 109 |
2N5400RLRA |
Amplifier Transistor PNP |
ON Semiconductor |
| 110 |
2N5400RLRP |
Amplifier Transistor PNP |
ON Semiconductor |
| 111 |
2N5401 |
AMPLIFIER TRANSISTOR PNP SILICON |
Boca Semiconductor Corporation |
| 112 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 113 |
2N5401-D |
Amplifier Transistors PNP Silicon |
ON Semiconductor |
| 114 |
2N5401G |
Amplifier Transistor(PNP Silicon) |
Motorola |
| 115 |
2N5401RLRAG |
Amplifier Transistors |
ON Semiconductor |
| 116 |
2N5401RLRP |
Amplifier Transistor PNP |
ON Semiconductor |
| 117 |
2N5447 |
PNP silicon amplifier transistor |
ITT Semiconductors |
| 118 |
2N5448 |
PNP silicon amplifier transistor |
ITT Semiconductors |
| 119 |
2N5449 |
NPN silicon amplifier transistor |
ITT Semiconductors |
| 120 |
2N5450 |
NPN silicon amplifier transistor |
ITT Semiconductors |
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