No. |
Part Name |
Description |
Manufacturer |
61 |
ADM206 |
0.1 �F, +5V CMOS RS-232 200kBPS Transceiver with 4 Drivers, 3 Receivers, a Shutdown Pin and an Enable Pin |
Analog Devices |
62 |
ADM8321 |
Supervisory Circuit with Watchdog, Active-Low Open-Drain and Active-High Push-Pull Reset Outputs |
Analog Devices |
63 |
ADM8322 |
Supervisory Circuit with Manual Reset, Active-Low Open-Drain and Active-High Push-Pull Reset Outputs |
Analog Devices |
64 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
65 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
66 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
67 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
68 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
69 |
AM82324-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
70 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
71 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
72 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
73 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
74 |
AN50 |
Op Amp Gain and Offset Trim using XICOR Digitally Controlled Potentiotiometers (XDCPs) |
Xicor |
75 |
AWT1921 |
The AWT 1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point. |
Anadigics Inc |
76 |
AWT921 |
The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point. |
Anadigics Inc |
77 |
BA379 |
PIN and Schottky Diode |
SESCOSEM |
78 |
BF222 |
Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC |
SGS-ATES |
79 |
BF357S |
Epitaxial planar NPN transistor, very low noise, high gain and good intermodulation properties |
SGS-ATES |
80 |
BFP90A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
81 |
BFP91A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
82 |
BFP96 |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
83 |
BFW92 |
NPN high-frequency transistor, low noise over a wide current range, very high power gain and good intermodulation |
Philips |
84 |
BQ24300 |
Charger front end protection IC with 30V max Vin and 5.5V LDO output |
Texas Instruments |
85 |
BQ24300DSGR |
Charger front end protection IC with 30V max Vin and 5.5V LDO output 8-WSON 0 to 125 |
Texas Instruments |
86 |
BQ24300DSGT |
Charger front end protection IC with 30V max Vin and 5.5V LDO output 8-WSON 0 to 125 |
Texas Instruments |
87 |
BQ24304 |
Charger front end protection IC with 30V max Vin and 4.5V LDO output |
Texas Instruments |
88 |
BQ24313 |
Charger front end protection IC with 30V max Vin and 10.5V OVP |
Texas Instruments |
89 |
BQ24313DSGR |
Charger front end protection IC with 30V max Vin and 10.5V OVP 8-WSON -40 to 125 |
Texas Instruments |
90 |
BQ24313DSGT |
Charger front end protection IC with 30V max Vin and 10.5V OVP 8-WSON -40 to 125 |
Texas Instruments |
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