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Datasheets for IN AND

Datasheets found :: 454
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No. Part Name Description Manufacturer
61 ADM206 0.1 �F, +5V CMOS RS-232 200kBPS Transceiver with 4 Drivers, 3 Receivers, a Shutdown Pin and an Enable Pin Analog Devices
62 ADM8321 Supervisory Circuit with Watchdog, Active-Low Open-Drain and Active-High Push-Pull Reset Outputs Analog Devices
63 ADM8322 Supervisory Circuit with Manual Reset, Active-Low Open-Drain and Active-High Push-Pull Reset Outputs Analog Devices
64 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
65 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
66 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
67 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
68 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
69 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
70 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
71 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
72 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
73 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
74 AN50 Op Amp Gain and Offset Trim using XICOR Digitally Controlled Potentiotiometers (XDCPs) Xicor
75 AWT1921 The AWT 1921 is a four stage monolithic amplifier for use in communication systems that require high gain and output intercept point. Anadigics Inc
76 AWT921 The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point. Anadigics Inc
77 BA379 PIN and Schottky Diode SESCOSEM
78 BF222 Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC SGS-ATES
79 BF357S Epitaxial planar NPN transistor, very low noise, high gain and good intermodulation properties SGS-ATES
80 BFP90A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
81 BFP91A NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
82 BFP96 NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion Philips
83 BFW92 NPN high-frequency transistor, low noise over a wide current range, very high power gain and good intermodulation Philips
84 BQ24300 Charger front end protection IC with 30V max Vin and 5.5V LDO output Texas Instruments
85 BQ24300DSGR Charger front end protection IC with 30V max Vin and 5.5V LDO output 8-WSON 0 to 125 Texas Instruments
86 BQ24300DSGT Charger front end protection IC with 30V max Vin and 5.5V LDO output 8-WSON 0 to 125 Texas Instruments
87 BQ24304 Charger front end protection IC with 30V max Vin and 4.5V LDO output Texas Instruments
88 BQ24313 Charger front end protection IC with 30V max Vin and 10.5V OVP Texas Instruments
89 BQ24313DSGR Charger front end protection IC with 30V max Vin and 10.5V OVP 8-WSON -40 to 125 Texas Instruments
90 BQ24313DSGT Charger front end protection IC with 30V max Vin and 10.5V OVP 8-WSON -40 to 125 Texas Instruments


Datasheets found :: 454
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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