| No. |
Part Name |
Description |
Manufacturer |
| 91 |
BQ24314 |
Charger front end protection IC with 30V max vin and 5.85V OVP |
Texas Instruments |
| 92 |
BQ24314DSGR |
Charger front end protection IC with 30V max vin and 5.85V OVP 8-WSON -40 to 85 |
Texas Instruments |
| 93 |
BQ24314DSGRG4 |
Charger front end protection IC with 30V max vin and 5.85V OVP 8-WSON -40 to 85 |
Texas Instruments |
| 94 |
BQ24314DSGT |
Charger front end protection IC with 30V max vin and 5.85V OVP 8-WSON -40 to 85 |
Texas Instruments |
| 95 |
BQ24314DSJR |
Charger front end protection IC with 30V max vin and 5.85V OVP 12-VSON -40 to 85 |
Texas Instruments |
| 96 |
BQ24314DSJT |
Charger front end protection IC with 30V max vin and 5.85V OVP 12-VSON -40 to 85 |
Texas Instruments |
| 97 |
BQ24316 |
Charger front end protection IC with 30V max Vin and 6.8V OVP |
Texas Instruments |
| 98 |
BQ24316DSGR |
Charger front end protection IC with 30V max Vin and 6.8V OVP 8-WSON -40 to 85 |
Texas Instruments |
| 99 |
BQ24316DSGT |
Charger front end protection IC with 30V max Vin and 6.8V OVP 8-WSON -40 to 85 |
Texas Instruments |
| 100 |
BQ24316DSGTG4 |
Charger front end protection IC with 30V max Vin and 6.8V OVP 8-WSON -40 to 85 |
Texas Instruments |
| 101 |
BQ24316DSJR |
Charger front end protection IC with 30V max Vin and 6.8V OVP 12-VSON -40 to 85 |
Texas Instruments |
| 102 |
BQ24316DSJT |
Charger front end protection IC with 30V max Vin and 6.8V OVP 12-VSON -40 to 85 |
Texas Instruments |
| 103 |
BZX84/C10 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 10V |
Siemens |
| 104 |
BZX84/C11 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 11V |
Siemens |
| 105 |
BZX84/C12 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 12V |
Siemens |
| 106 |
BZX84/C4V7 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 4.7V |
Siemens |
| 107 |
BZX84/C5V1 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 5.1V |
Siemens |
| 108 |
BZX84/C5V6 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 5.6V |
Siemens |
| 109 |
BZX84/C6V2 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 6.2V |
Siemens |
| 110 |
BZX84/C6V8 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 6.8V |
Siemens |
| 111 |
BZX84/C7V5 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 7.5V |
Siemens |
| 112 |
BZX84/C8V2 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 8.2V |
Siemens |
| 113 |
BZX84/C9V1 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 9.1V |
Siemens |
| 114 |
ESM246 |
PIN and Schottky Diode |
SESCOSEM |
| 115 |
ESM247 |
PIN and Schottky Diode |
SESCOSEM |
| 116 |
FXMAR2104 |
Dual-Supply, 4-Bit Voltage Translator / Isolator for Open-Drain and Push-Pull Applications |
Fairchild Semiconductor |
| 117 |
IC PACKAGES |
Plastic power packages with cooling fin and 9 pins, SIP, Metal package 5 J 10 DIN 41873 (similar to TO100) |
Siemens |
| 118 |
K2EB-110V-1 |
K-relay. Uniquely designed relay. 2 form C. Coil voltage 110 V DC. Plug-in and solder. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 119 |
K4EB-110V-1 |
K-relay. Uniquely designed relay. 4 form C. Coil voltage 110 V DC. Plug-in and solder. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
| 120 |
K6EB-110V |
K-relay. Uniquely designed relay. 6 form C. Coil voltage 110 V DC. Plug-in and solder. High sensitivity relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
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