| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N6159US |
Diode TVS Single Bi-Dir 38.8V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 62 |
1N6160AUS |
Diode TVS Single Bi-Dir 42.6V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 63 |
1N6161US |
Diode TVS Single Bi-Dir 47.1V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 64 |
1N6170US |
Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 65 |
1N6173US |
Diode TVS Single Bi-Dir 152V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 66 |
1PS76SB21 |
Schottky barrier diodes in small packages |
Nexperia |
| 67 |
1PS76SB21 |
Schottky barrier diodes in small packages |
NXP Semiconductors |
| 68 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 69 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 70 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 71 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 72 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 73 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 74 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 75 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 76 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 77 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 78 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 79 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 80 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 81 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 82 |
21-0114 |
PACKAGE OUTLINE, 6 LEAD THIN SOT23, (LOW PROFILE) |
MAXIM - Dallas Semiconductor |
| 83 |
21-0114B |
PACKAGE OUTLINE, 6 LEAD THIN SOT23, (LOW PROFILE) |
MAXIM - Dallas Semiconductor |
| 84 |
236 |
Pin Switch Drivers |
Micronetics Inc |
| 85 |
2DA1201Y |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
| 86 |
2DA1201Y-7 |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
| 87 |
2DA1201YQTC |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
| 88 |
2DA1971 |
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 |
Diodes |
| 89 |
2DA1971-13 |
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 |
Diodes |
| 90 |
2DA1971-7 |
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 |
Diodes |
| | | |
