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Datasheets for IN S

Datasheets found :: 11152
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No. Part Name Description Manufacturer
91 2N5642 Trans GP BJT NPN 35V 3A 4-Pin Style M135 New Jersey Semiconductor
92 2N5643 Trans GP BJT NPN 35V 5A 4-Pin Style M135 New Jersey Semiconductor
93 2N5916 High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE RCA Solid State
94 2N5917 High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE RCA Solid State
95 2N5918 10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor RCA Solid State
96 2N6081 Trans GP BJT NPN 18V 2.5A 4-Pin Style M135 New Jersey Semiconductor
97 2N6084 Trans GP BJT NPN 18V 6A 4-Pin Style M135 New Jersey Semiconductor
98 2SA1166 Trans GP BJT PNP 50V 0.15A 3-Pin SC-59 T/R New Jersey Semiconductor
99 2SA1169 Trans GP BJT PNP 50V 0.15A 3-Pin SC-59 T/R New Jersey Semiconductor
100 2SA350 Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier Hitachi Semiconductor
101 2SA351 Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter Hitachi Semiconductor
102 2SA352 Germanium PNP Transistor Drift Junction, intended for use in SW Mixer Hitachi Semiconductor
103 2SB1477 Trans GP BJT PNP 16V 0.5A 3-Pin SC-70 New Jersey Semiconductor
104 2SB1478 Trans GP BJT PNP 16V 0.5A 3-Pin SC-70 New Jersey Semiconductor
105 2SB564 Trans GP BJT PNP 25V 1A 3-Pin SP-8 New Jersey Semiconductor
106 2SC1940 Trans GP BJT NPN 120V 0.05A 3-Pin SP-8 New Jersey Semiconductor
107 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
108 2SC5179-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
109 2SC5179-T2 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
110 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
111 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
112 2SC5184-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
113 2SC5184-T2 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
114 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
115 2SC5185-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
116 2SC5185-T2 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
117 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NEC
118 2SC5507-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NEC
119 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NEC
120 2SC5508-T2 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NEC


Datasheets found :: 11152
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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