| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ISO7831DWWR |
High-Immunity, 5.7kVRMS Reinforced Triple-Channel 2/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 62 |
ISO7831FDW |
High-Immunity, 5.7kVRMS Reinforced Triple-Channel 2/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 63 |
ISO7831FDWR |
High-Immunity, 5.7kVRMS Reinforced Triple-Channel 2/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 64 |
ISO7831FDWW |
High-Immunity, 5.7kVRMS Reinforced Triple-Channel 2/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 65 |
ISO7831FDWWR |
High-Immunity, 5.7kVRMS Reinforced Triple-Channel 2/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 66 |
ISO7840 |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 4/0 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 67 |
ISO7840DW |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 4/0 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 68 |
ISO7840DWR |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 4/0 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 69 |
ISO7840DWW |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 4/0 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 70 |
ISO7840DWWR |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 4/0 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 71 |
ISO7840FDW |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 4/0 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 72 |
ISO7840FDWR |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 4/0 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 73 |
ISO7840FDWW |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 4/0 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 74 |
ISO7840FDWWR |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 4/0 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 75 |
ISO7841 |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 3/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 76 |
ISO7841DW |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 3/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 77 |
ISO7841DWR |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 3/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 78 |
ISO7841DWW |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 3/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 79 |
ISO7841DWWR |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 3/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 80 |
ISO7841FDW |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 3/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 81 |
ISO7841FDWR |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 3/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 82 |
ISO7841FDWW |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 3/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 83 |
ISO7841FDWWR |
High-Immunity, 5.7kVRMS Reinforced Quad-Channel 3/1 Digital Isolator, 100Mbps 16-SOIC -55 to 125 |
Texas Instruments |
| 84 |
KM416C254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
| 85 |
KM416C254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
| 86 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 87 |
KM416C254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
| 88 |
KM416C254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
| 89 |
KM416C254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
| 90 |
KM416V254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
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