| No. |
Part Name |
Description |
Manufacturer |
| 91 |
KM416V254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
| 92 |
KM416V254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 93 |
KM416V254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
| 94 |
KM416V254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
| 95 |
KM416V254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
| 96 |
KM41C4000DJ-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns |
Samsung Electronic |
| 97 |
KM41C4000DJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns |
Samsung Electronic |
| 98 |
KM41C4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
| 99 |
KM41C4000DLJ-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns |
Samsung Electronic |
| 100 |
KM41C4000DLJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns |
Samsung Electronic |
| 101 |
KM41C4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns |
Samsung Electronic |
| 102 |
KM41C4000DLT-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns |
Samsung Electronic |
| 103 |
KM41C4000DLT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns |
Samsung Electronic |
| 104 |
KM41C4000DLT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns |
Samsung Electronic |
| 105 |
KM41C4000DT-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns |
Samsung Electronic |
| 106 |
KM41C4000DT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns |
Samsung Electronic |
| 107 |
KM41C4000DT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
| 108 |
KM41V4000DJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 60ns |
Samsung Electronic |
| 109 |
KM41V4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 70ns |
Samsung Electronic |
| 110 |
KM41V4000DLJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns |
Samsung Electronic |
| 111 |
KM41V4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns |
Samsung Electronic |
| 112 |
KM41V4000DLT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns |
Samsung Electronic |
| 113 |
KM41V4000DLT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns |
Samsung Electronic |
| 114 |
KM41V4000DT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 60ns |
Samsung Electronic |
| 115 |
KM41V4000DT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 70ns |
Samsung Electronic |
| 116 |
LT1806CS8 |
325MHz,140V/ms Rail-to-Rail Input and Output Low Distortion, Low Noise Precision Op Amp |
Linear Technology |
| 117 |
LT1806IS8 |
325MHz,140V/ms Rail-to-Rail Input and Output Low Distortion, Low Noise Precision Op Amp |
Linear Technology |
| 118 |
LT1809CS8 |
180MHz/ 350V/ms Rail-to-Rail Input and Output Low Distortion Op Amp |
Linear Technology |
| 119 |
LT1809IS8 |
180MHz/ 350V/ms Rail-to-Rail Input and Output Low Distortion Op Amp |
Linear Technology |
| 120 |
MR18R1624(6,8)MN1 |
(16Mx16)*4(6/8)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect |
Samsung Electronic |
| | | |
