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Datasheets for ORWARD RE

Datasheets found :: 317
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No. Part Name Description Manufacturer
61 1N38B Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35 New Jersey Semiconductor
62 BA243 Silicon Switching Diode, the forward resistance is constant and very little IPRS Baneasa
63 BA244 Silicon Switching Diode, the forward resistance is constant and very little IPRS Baneasa
64 BAR63 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
65 BAR63-02W Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) Siemens
66 BAR63-03 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
67 BAR63-03W Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
68 BAR63-04 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
69 BAR63-04W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
70 BAR63-05 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
71 BAR63-05W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
72 BAR63-06 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
73 BAR63-06W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
74 BAR63-W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
75 BAT18 -Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Siemens
76 BAT18 Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Siemens
77 BAT18 Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Siemens
78 BAT18 -Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Siemens
79 BAT18-04 Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Siemens
80 BAT18-05 Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Siemens
81 BAT18-06 Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) Siemens
82 FR801R Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 50V. Maximum average forward rectified current 8.0A. Bytes
83 FR802R Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 100V. Maximum average forward rectified current 8.0A. Bytes
84 FR803R Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 200V. Maximum average forward rectified current 8.0A. Bytes
85 FR804R Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 400V. Maximum average forward rectified current 8.0A. Bytes
86 FR805R Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 600V. Maximum average forward rectified current 8.0A. Bytes
87 FR806R Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 800V. Maximum average forward rectified current 8.0A. Bytes
88 GBL401 Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Panjit International Inc
89 GBL402 Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Panjit International Inc
90 GBL404 Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Panjit International Inc


Datasheets found :: 317
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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