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Datasheets for P M

Datasheets found :: 21003
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 2N3635 1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
62 2N3636 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
63 2N3637 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
64 2N3867 1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. Continental Device India Limited
65 2N4030 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
66 2N4031 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
67 2N4031 80 V, PNP medium power transistor Philips
68 2N4032 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
69 2N4033 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
70 2N4033 80 V, PNP medium power transistor Philips
71 2N4033CSM4 HIGH SPEED PNP MEDIUM VOLTAGE TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE SemeLAB
72 2N4036 1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. Continental Device India Limited
73 2N4036 Silicon p-n-p medium power switching transistor Mullard
74 2N4037 1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. Continental Device India Limited
75 2N4234 6.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
76 2N4235 6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
77 2N4236 6.000W General Purpose PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
78 2N4898 Silicon P-N-P medium power transistor. 40V, 25W. General Electric Solid State
79 2N4899 Silicon P-N-P medium power transistor. 60V, 25W. General Electric Solid State
80 2N4900 Silicon P-N-P medium power transistor. 80V, 25W. General Electric Solid State
81 2N5193 Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package SGS-ATES
82 2N5194 Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package SGS-ATES
83 2N5195 Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package SGS-ATES
84 2N5415 1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. Continental Device India Limited
85 2N5416 1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. Continental Device India Limited
86 2N5679 10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
87 2N5680 10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
88 2N5954 Silicon P-N-P medium-power transistor. -90V, 40W. General Electric Solid State
89 2N5955 Silicon P-N-P medium-power transistor. -70V, 40W. General Electric Solid State
90 2N5956 Silicon P-N-P medium-power transistor. -50V, 40W. General Electric Solid State


Datasheets found :: 21003
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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