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Datasheets for P M

Datasheets found :: 21003
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No. Part Name Description Manufacturer
91 2N6034 PNP medium power darlington transistor, 4A , 40V SGS Thomson Microelectronics
92 2N6034 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
93 2N6035 PNP medium power darlington transistor, 4A , 60V SGS Thomson Microelectronics
94 2N6035 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
95 2N6036 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
96 2N6050 12A P-N-P monolithic darlington power transistor. General Electric Solid State
97 2N6051 12A P-N-P monolithic darlington power transistor. General Electric Solid State
98 2N6052 12A P-N-P monolithic darlington power transistor. General Electric Solid State
99 2N6124 Silicon epitaxial-base PNP medium power transistor SGS-ATES
100 2N6125 Silicon epitaxial-base PNP medium power transistor SGS-ATES
101 2N6126 Silicon epitaxial-base PNP medium power transistor SGS-ATES
102 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
103 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
104 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
105 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
106 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
107 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
108 2N6467 Silicon P-N-P medium-power transistor. -110V, 40W. General Electric Solid State
109 2N6468 Silicon P-N-P medium-power transistor. -130V, 40W. General Electric Solid State
110 2N7002E 60V; 0.25A; N-channel enchanced mode field effect transistor SamHop Microelectronics Corp.
111 2SA1224 PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) NEC
112 2SA1977-L Transistor for amplifying PNP micro wave NEC
113 2SA1977-T1 Transistor for amplifying PNP micro wave NEC
114 2SA1977-T1B Transistor for amplifying PNP micro wave NEC
115 2SA234 Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter Hitachi Semiconductor
116 2SA235 Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter Hitachi Semiconductor
117 2SAR293P5 PNP Middle Power Driver Transistor (-30V / -1.0A) ROHM
118 2SAR293P5T100 PNP Middle Power Driver Transistor (-30V / -1.0A) ROHM
119 30S 3 AMP MEDIUM POWER SILICON RECTIFIER DIODES Microsemi
120 30S5 3 AMP MEDIUM POWER SILICON RECTIFIER DIODES Microsemi


Datasheets found :: 21003
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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