| No. |
Part Name |
Description |
Manufacturer |
| 61 |
NJU7094M |
Low-power and low-offset voltage dual C-MOS power amplifier |
New Japan Radio |
| 62 |
NJU7094R |
Low-power and low-offset voltage dual C-MOS power amplifier |
New Japan Radio |
| 63 |
NJU7094V |
Low-power and low-offset voltage dual C-MOS power amplifier |
New Japan Radio |
| 64 |
NJU7095D |
Low-power and low-offset voltage dual C-MOS power amplifier |
New Japan Radio |
| 65 |
NJU7095M |
Low-power and low-offset voltage dual C-MOS power amplifier |
New Japan Radio |
| 66 |
NJU7095R |
Low-power and low-offset voltage dual C-MOS power amplifier |
New Japan Radio |
| 67 |
NJU7095V |
Low-power and low-offset voltage dual C-MOS power amplifier |
New Japan Radio |
| 68 |
NJU7096D |
Low-power and low-offset voltage dual C-MOS power amplifier |
New Japan Radio |
| 69 |
NJU7096M |
Low-power and low-offset voltage dual C-MOS power amplifier |
New Japan Radio |
| 70 |
NJU7096R |
Low-power and low-offset voltage dual C-MOS power amplifier |
New Japan Radio |
| 71 |
NJU7096V |
Low-power and low-offset voltage dual C-MOS power amplifier |
New Japan Radio |
| 72 |
PB-CMM1321 |
1.85 to 1.91 GHz, 5 V, 28.5 dBm PCS power amplifier |
CELERITEK |
| 73 |
RF2140 |
3V DCS POWER AMPLIFIER |
RF Micro Devices |
| 74 |
RF2140PCBA |
3V DCS POWER AMPLIFIER |
RF Micro Devices |
| 75 |
RF2174 |
3V DCS POWER AMPLIFIER |
RF Micro Devices |
| 76 |
RF2174PCBA |
3V DCS POWER AMPLIFIER |
RF Micro Devices |
| 77 |
RF3183 |
Quad Band GSM850 / EGSM900 / DCS / PCS Power Amplifier Module |
Qorvo |
| 78 |
RMM5030 |
9-10 GHz GaAs power amplifier MMIC |
Raytheon |
| 79 |
RMPA1765 |
28dBm K-PCS Power Amplifier Module |
Fairchild Semiconductor |
| 80 |
RMPA1850 |
Quad Band GSM/GPRS Power Amplifier Module |
Fairchild Semiconductor |
| 81 |
RMPA1901-53 |
PCS CDMA GaAs power amplifier MMIC |
Raytheon |
| 82 |
RMPA1902A-58 |
PCS GaAs power amplifier MMIC |
Raytheon |
| 83 |
RMPA2000-58 |
1.8-2 GHz GaAs power amplifier MMIC |
Raytheon |
| 84 |
RMPA2450-58 |
2.4-2.5 GHz GaAs power amplifier MMIC |
Raytheon |
| 85 |
RMPA39000 |
37-40 GHz GaAs power amplifier MMIC |
Raytheon |
| 86 |
RN5001 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 87 |
RN5002 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 88 |
RN5003 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 89 |
RN5006 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 90 |
RN6001 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| | | |
