No. |
Part Name |
Description |
Manufacturer |
91 |
RN6002 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
92 |
RN6003 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
93 |
RN6006 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications |
TOSHIBA |
94 |
T458BPA |
17 - 24 GHz GaAs Power Amplifier / Driver MMIC |
Infineon |
95 |
TGA2621 |
16 - 18 GHz, 1 Watt GaAs Power Amplifier |
Qorvo |
96 |
TGA2621-SM |
16 - 18.5 GHz, 1 Watt GaAs Power Amplifier |
Qorvo |
97 |
TPS9103 |
POWER SUPPLY FOR GaAs POWER AMPLIFIERS |
Texas Instruments |
98 |
TPS9103PW |
POWER SUPPLY FOR GaAs POWER AMPLIFIERS |
Texas Instruments |
99 |
TPS9103Y |
POWER SUPPLY FOR GaAs POWER AMPLIFIERS |
Texas Instruments |
100 |
TQ9132B |
3V Cellular TDMA/AMPS Power Amplifier IC |
TriQuint Semiconductor |
101 |
TQ9147B |
2-Stage AMPS Power Amplifier IC |
TriQuint Semiconductor |
102 |
TQM7M4014 |
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module |
TriQuint Semiconductor |
103 |
TQM7M4022 |
Quad-Band GSM850/900/DCSPCS Power Amplifier Module |
TriQuint Semiconductor |
104 |
UBA1710M |
Modulator for GaAs power amplifiers |
Philips |
105 |
UPD5702TU-E2 |
2.4 GHz Si LD MOS power amplifier. |
NEC |
106 |
UPG2301TQ |
NECs POWER AMPLIFIER FOR BLUETOOH CLASS 1 |
California Eastern Laboratories |
| | | |