| No. |
Part Name |
Description |
Manufacturer |
| 61 |
CAY16-103J4 |
CAT/CAY 16 Series-Chip Resistor Arrays |
BOURNS |
| 62 |
CAY16-103J4LF |
CAT/CAY 16 Series-Chip Resistor Arrays |
BOURNS |
| 63 |
CAY16-103J8 |
CAT/CAY 16 Series-Chip Resistor Arrays |
BOURNS |
| 64 |
CAY16-103J8LF |
CAT/CAY 16 Series-Chip Resistor Arrays |
BOURNS |
| 65 |
CXY16A |
Gunn effect diode |
mble |
| 66 |
CXY16B |
Gunn effect diode |
mble |
| 67 |
CXY16C |
Gunn effect diode |
mble |
| 68 |
CXY16D |
Gunn effect diode |
mble |
| 69 |
CXY16E |
Gunn effect diode |
mble |
| 70 |
CXY16F |
Gunn effect diode |
mble |
| 71 |
DCR1474SY16 |
Phase Control Thyristor |
Dynex Semiconductor |
| 72 |
DS2102SY16 |
Rectifier Diode |
Dynex Semiconductor |
| 73 |
EE-SY169 |
Phototransistor Output with Convergent Lens for Precise Sensing |
Omron |
| 74 |
EE-SY169A |
Phototransistor Output with Convergent Lens for Precise Sensing |
Omron |
| 75 |
KFY16 |
PNP silicon epitaxial planar transistor |
Mikroelektronikai Vallalat |
| 76 |
KFY16 |
PNP transistor for industrial purpose |
Tesla Elektronicke |
| 77 |
KSY16 |
GaAs Hall Sensor on Cu-leadframe for ... |
Infineon |
| 78 |
KSY16 |
Hall Sensor |
Siemens |
| 79 |
KTY16-6 |
Silicon Temperature Sensor |
Infineon |
| 80 |
KTY16-6 |
Silicon Spreading Resistance Temperature Sensor in Miniature Metal Housing |
Siemens |
| 81 |
KTY16-6E6756 |
Silicon Temperature Sensor |
Infineon |
| 82 |
KTY16-6E6788 |
Silicon Temperature Sensor |
Infineon |
| 83 |
LNSY16 |
NTC Thermistor SMD |
etc |
| 84 |
M5M29FB800VP |
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 85 |
M5M29FT800RV-10 |
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 86 |
M5M29FT800RV-12 |
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 87 |
M5M29FT800VP |
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 88 |
M5M29GB |
16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 89 |
M5M29GB160BVP |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 90 |
M5M29GB160BVP-80 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
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