| No. |
Part Name |
Description |
Manufacturer |
| 91 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 92 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 93 |
M5M29GT160BVP |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 94 |
M5M29GT160BVP-80 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 95 |
M5M29GT161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 96 |
M5M29GT161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 97 |
MAZY160 |
Small-signal device - Diodes - Zener Diodes |
Panasonic |
| 98 |
MC68HC908EY16 |
MC68HC908EY16 Advance Information |
Motorola |
| 99 |
MC68HC908EY16 |
MC68HC908EY16 Advance Information |
Motorola |
| 100 |
MC68HC908EY16CFA |
Microcontrollers |
Motorola |
| 101 |
MC68HC908EY16MFA |
Microcontrollers |
Motorola |
| 102 |
MC68HC908EY16VFA |
Microcontrollers |
Motorola |
| 103 |
MTY16N80E |
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM |
Motorola |
| 104 |
MTY16N80E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 105 |
MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor |
ON Semiconductor |
| 106 |
RHY16 |
Ferrite Hall Generator |
Siemens |
| 107 |
RHY16 |
Hall Generator |
Siemens |
| 108 |
SAY16 |
Si switching diode, possibly equivalent BAY41 |
RFT |
| 109 |
SKY16406-381LF |
2.2-2.8 GHz Two-Way, 0 Degrees Power Divider |
Skyworks Solutions |
| 110 |
SKY16601-555LF |
Integrated Single-Stage PIN Diode Limiter Module 0.50 to 6.0 GHz |
Skyworks Solutions |
| 111 |
SKY16602-632LF |
Low-Threshold PIN Diode Limiter 0.2 to 4.0 GHz |
Skyworks Solutions |
| 112 |
STY16NA90 |
N - CHANNEL 900V - 0.5 Ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET |
SGS Thomson Microelectronics |
| 113 |
STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET |
ST Microelectronics |
| 114 |
SY16 |
10 WATT VOLTAGE REGULATOR |
Semtech |
| 115 |
SY160 |
Silicon rectifier diode for currents up to 10A |
RFT |
| 116 |
SY162 |
Silicon rectifier diode for currents up to 10A |
RFT |
| 117 |
SY164 |
Silicon rectifier diode for currents up to 10A |
RFT |
| 118 |
SY166 |
Silicon rectifier diode for currents up to 10A |
RFT |
| 119 |
T161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 120 |
TMJ320C6211GNY167 |
FIXED-POINT DIGITAL SIGNAL PROCESSORS |
Texas Instruments |
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