| No. |
Part Name |
Description |
Manufacturer |
| 631 |
IC41LV44054-50J |
4Mx4 bit Dynamic RAM with Fast Page Mode |
Integrated Circuit Solution Inc |
| 632 |
IC41LV44054-50JI |
4Mx4 bit Dynamic RAM with Fast Page Mode |
Integrated Circuit Solution Inc |
| 633 |
IC41LV44054-50T |
4Mx4 bit Dynamic RAM with Fast Page Mode |
Integrated Circuit Solution Inc |
| 634 |
IC41LV44054-50TI |
4Mx4 bit Dynamic RAM with Fast Page Mode |
Integrated Circuit Solution Inc |
| 635 |
IC41LV44054-60J |
4Mx4 bit Dynamic RAM with Fast Page Mode |
Integrated Circuit Solution Inc |
| 636 |
IC41LV44054-60JI |
4Mx4 bit Dynamic RAM with Fast Page Mode |
Integrated Circuit Solution Inc |
| 637 |
IC41LV44054-60T |
4Mx4 bit Dynamic RAM with Fast Page Mode |
Integrated Circuit Solution Inc |
| 638 |
IC41LV44054-60TI |
4Mx4 bit Dynamic RAM with Fast Page Mode |
Integrated Circuit Solution Inc |
| 639 |
IM5603 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY |
Intersil |
| 640 |
IM5623 |
ELECTRICALLY PROGRAMMABLE 1024 BIT BIPOLAR READ ONLY MEMORY |
Intersil |
| 641 |
IN74ALS161AD |
Synchronous 4 bit counters; binary, direct reset |
INTEGRAL |
| 642 |
IN74ALS161AN |
Synchronous 4 bit counters; binary, direct reset |
INTEGRAL |
| 643 |
IN74LS161D |
Synchronous 4 bit counter; binary, direct reset |
INTEGRAL |
| 644 |
IN74LS161N |
Synchronous 4 bit counter; binary, direct reset |
INTEGRAL |
| 645 |
IS41C44002 |
4Mx4 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 646 |
IS41C44004 |
4Mx4 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 647 |
IS41LV44002 |
4Mx4 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 648 |
IS41LV44004 |
4Mx4 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 649 |
ISL5929 |
D/A Converter, Dual, 14 Bit, 130/210MSPS, High Speed, +3.3V |
Intersil |
| 650 |
ISL5961 |
D/A Converter, 14 Bit, 130/210/250MSPS, High Speed, +3.3V |
Intersil |
| 651 |
JSFC493 |
4 bit binary counter |
SESCOSEM |
| 652 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 653 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 654 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 655 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 656 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 657 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 658 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 659 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 660 |
K4E640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
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