| No. |
Part Name |
Description |
Manufacturer |
| 661 |
K4E640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 662 |
K4E660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 663 |
K4E660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 664 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 665 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 666 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 667 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 668 |
K4F170411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 669 |
K4F170411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 670 |
K4F170412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 671 |
K4F170412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 672 |
K4F640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 673 |
K4F640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 674 |
K4F660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 675 |
K4F660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 676 |
K64004C1D |
1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 677 |
K6R1004C1D |
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet |
Samsung Electronic |
| 678 |
K6R1004C1D-JC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 679 |
K6R1004C1D-JI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 680 |
K6R1004C1D-KC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 681 |
K6R1004C1D-KI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 682 |
K6R1004V1D |
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM(3.3V Operating) Row Select Data Sheet |
Samsung Electronic |
| 683 |
K6R1004V1D-JC08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 684 |
K6R1004V1D-JC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 685 |
K6R1004V1D-JI08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 686 |
K6R1004V1D-JI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 687 |
K6R1004V1D-KC08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 688 |
K6R1004V1D-KC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 689 |
K6R1004V1D-KI08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 690 |
K6R1004V1D-KI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
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