No. |
Part Name |
Description |
Manufacturer |
631 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
632 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
633 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
634 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
635 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
636 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
637 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
638 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
639 |
2N6292 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
640 |
2N6293 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
641 |
2N6342A |
12-A silicon triac. 200 V. |
General Electric Solid State |
642 |
2N6343A |
12-A silicon triac. 400 V. |
General Electric Solid State |
643 |
2N6344A |
12-A silicon triac. 600 V. |
General Electric Solid State |
644 |
2N6345A |
12-A silicon triac. 800 V. |
General Electric Solid State |
645 |
2N6346A |
12-A silicon triac. 200 V. |
General Electric Solid State |
646 |
2N6347A |
12-A silicon triac. 400 V. |
General Electric Solid State |
647 |
2N6348A |
12-A silicon triac. 600 V. |
General Electric Solid State |
648 |
2N6349A |
12-A silicon triac. 800 V. |
General Electric Solid State |
649 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
650 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
651 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
652 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
653 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
654 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
655 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
656 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
657 |
2N6394 |
12A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
658 |
2N6395 |
12A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
659 |
2N6396 |
12A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
660 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
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