No. |
Part Name |
Description |
Manufacturer |
721 |
2N6753 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
722 |
2N6754 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
723 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
724 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
725 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
726 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
727 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
728 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
729 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
730 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
731 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
732 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
733 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
734 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
735 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
736 |
2N681 |
25A silicon controlled rectifier. Vrsom 35V. |
General Electric Solid State |
737 |
2N682 |
25A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
738 |
2N683 |
25A silicon controlled rectifier. Vrsom 150V. |
General Electric Solid State |
739 |
2N684 |
25A silicon controlled rectifier. Vrsom 225V. |
General Electric Solid State |
740 |
2N685 |
25A silicon controlled rectifier. Vrsom 300V. |
General Electric Solid State |
741 |
2N686 |
25A silicon controlled rectifier. Vrsom 350V. |
General Electric Solid State |
742 |
2N687 |
25A silicon controlled rectifier. Vrsom 400V. |
General Electric Solid State |
743 |
2N688 |
25A silicon controlled rectifier. Vrsom 500V. |
General Electric Solid State |
744 |
2N689 |
25A silicon controlled rectifier. Vrsom 600V. |
General Electric Solid State |
745 |
2N690 |
25A silicon controlled rectifier. Vrsom 720V. |
General Electric Solid State |
746 |
2N691 |
25A silicon controlled rectifier. Vrsom 840V. |
General Electric Solid State |
747 |
2N692 |
25A silicon controlled rectifier. Vrsom 960V. |
General Electric Solid State |
748 |
2N697 |
Silicon N-P-N planar transistor. |
General Electric Solid State |
749 |
3N128 |
Silicon MOS Transistor |
General Electric Solid State |
750 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
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