| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2N3055/10 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 632 |
2N3055/2 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 633 |
2N3055/3 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 634 |
2N3055/4 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 635 |
2N3055/5 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 636 |
2N3055/6 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 637 |
2N3055/7 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 638 |
2N3055/8 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 639 |
2N3055/9 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 640 |
2N3055H |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 641 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 642 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
| 643 |
2N3055W |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 644 |
2N3174 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 645 |
2N3202 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 646 |
2N3244 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 647 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 648 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 649 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 650 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 651 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
| 652 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
| 653 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
| 654 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
| 655 |
2N3415 |
0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE |
Continental Device India Limited |
| 656 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 657 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 658 |
2N3439 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 659 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 660 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
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