| No. |
Part Name |
Description |
Manufacturer |
| 721 |
2N3918 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 722 |
2N3931 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 723 |
2N3966 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 724 |
2N4000 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 725 |
2N4001 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 726 |
2N4027 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 727 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 728 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 729 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 730 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 731 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 732 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 733 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 734 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 735 |
2N4036 |
1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. |
Continental Device India Limited |
| 736 |
2N4036 |
1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. |
Continental Device India Limited |
| 737 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 738 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 739 |
2N404 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 740 |
2N4091 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 741 |
2N4091A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 742 |
2N4092 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 743 |
2N4092A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 744 |
2N4093 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 745 |
2N4093A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 746 |
2N4113 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 747 |
2N4114 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 748 |
2N4220 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 749 |
2N4220A |
N channel field effect transistor (metal can) |
SESCOSEM |
| 750 |
2N4221 |
N channel field effect transistor (metal can) |
SESCOSEM |
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