| No. |
Part Name |
Description |
Manufacturer |
| 811 |
2N5232 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 812 |
2N5232A |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - 500 hFE |
Continental Device India Limited |
| 813 |
2N5252 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 814 |
2N5253 |
BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE |
SemeLAB |
| 815 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 816 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 817 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 818 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 819 |
2N5320 |
10.000W Switching NPN Metal Can Transistor. 75V Vceo, 2.000A Ic, 30 - 130 hFE. |
Continental Device India Limited |
| 820 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 821 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 822 |
2N5321 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 823 |
2N5323 |
TO-39 Metal Can Transistor |
Micro Commercial Components |
| 824 |
2N5335 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 825 |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE |
SemeLAB |
| 826 |
2N5338 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 827 |
2N5400 |
0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE |
Continental Device India Limited |
| 828 |
2N5401 |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 829 |
2N5401AI |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 830 |
2N5401SAM |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
| 831 |
2N5414 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 832 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 833 |
2N5415 |
1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 834 |
2N5415 |
PNP switching transistor - metal case, high power |
IPRS Baneasa |
| 835 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 836 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 837 |
2N5416 |
PNP switching transistor - metal case, high power |
IPRS Baneasa |
| 838 |
2N5432 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 839 |
2N5433 |
N channel field effect transistor (metal can) |
SESCOSEM |
| 840 |
2N5434 |
N channel field effect transistor (metal can) |
SESCOSEM |
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