| No. |
Part Name |
Description |
Manufacturer |
| 901 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 902 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 903 |
2N5743 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 904 |
2N5758 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 905 |
2N5759 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 906 |
2N5770 |
0.350W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.050A Ic, 50 - 200 hFE |
Continental Device India Limited |
| 907 |
2N5781 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 908 |
2N5864 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 909 |
2N5867 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 910 |
2N5870 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 911 |
2N5871 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 912 |
2N5871 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 913 |
2N5871/1 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 914 |
2N5871/2 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 915 |
2N5872 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 916 |
2N5872 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 917 |
2N5872A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 918 |
2N5872B |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 919 |
2N5873 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 920 |
2N5873 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 921 |
2N5873/1 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 922 |
2N5873/2 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 923 |
2N5874 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 924 |
2N5874 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
SemeLAB |
| 925 |
2N5874A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 926 |
2N5874B |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 927 |
2N5930 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 928 |
2N5934 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 929 |
2N5937 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 930 |
2N5971 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
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