| No. |
Part Name |
Description |
Manufacturer |
| 961 |
2N6262 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 962 |
2N6263 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 963 |
2N6264 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 964 |
2N6270 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
SemeLAB |
| 965 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
| 966 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
| 967 |
2N6292 |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
| 968 |
2N6303 |
Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case |
SGS-ATES |
| 969 |
2N6338A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 970 |
2N6339A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 971 |
2N6340A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 972 |
2N6341A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 973 |
2N6371 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 974 |
2N6425 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 975 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
| 976 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
| 977 |
2N6436A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 978 |
2N6437A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 979 |
2N6438A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 980 |
2N6461 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 981 |
2N6463 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 982 |
2N6486 |
75.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 983 |
2N6487 |
75.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 984 |
2N6488 |
75.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 985 |
2N6489 |
75.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 986 |
2N6490 |
75.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 987 |
2N6491 |
75.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 988 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
| 989 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 990 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
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