| No. |
Part Name |
Description |
Manufacturer |
| 931 |
2N6032 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 932 |
2N6033 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 933 |
2N6034 |
W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
| 934 |
2N6036 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. |
Continental Device India Limited |
| 935 |
2N6037 |
40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
| 936 |
2N6038 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
| 937 |
2N6039 |
W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
| 938 |
2N6077 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 939 |
2N6079 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 940 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 941 |
2N6107 |
40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
| 942 |
2N6109 |
40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 943 |
2N6111 |
40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 944 |
2N6121 |
40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE. |
Continental Device India Limited |
| 945 |
2N6122 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 946 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 947 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 948 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 949 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 950 |
2N6230 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 951 |
2N6234 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. |
SemeLAB |
| 952 |
2N6235 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 953 |
2N6247 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 954 |
2N6253 |
General purpose NPN transistor - metal case, high power |
IPRS Baneasa |
| 955 |
2N6253 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 956 |
2N6254 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 957 |
2N6257 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 958 |
2N6258 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 959 |
2N6259 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 960 |
2N6261 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
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