| No. |
Part Name |
Description |
Manufacturer |
| 6421 |
2SC3628 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 6422 |
2SC3629 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 6423 |
2SC3630 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 6424 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
| 6425 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
| 6426 |
2SC3728 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 6427 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
| 6428 |
2SC3814 |
Class C, 940MHz 7 volt power transistor (This datasheet of NE090101-07 is also the datasheet of 2SC3814, see the Electrical Characteristics table) |
NEC |
| 6429 |
2SC3815 |
Class C, 940MHz 7 volt power transistor (This datasheet of NEM090301-07 is also the datasheet of 2SC3815, see the Electrical Characteristics table) |
NEC |
| 6430 |
2SC3816 |
Class C, 940MHz 7 volt power transistor (This datasheet of NEM090701-07 is also the datasheet of 2SC3816, see the Electrical Characteristics table) |
NEC |
| 6431 |
2SC3866 |
TRIPLE DIFFUSED PLANER TYPE |
Fuji Electric |
| 6432 |
2SC3908 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 6433 |
2SC3928 |
For Low Frequency Amplify Application Sillcon Npn Epitaxial Type (Mini type) |
Isahaya Electronics Corporation |
| 6434 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
| 6435 |
2SC4090 |
NPN silicon general purpose transistor (This datasheet of the NE73439 is also the datasheet of 2SC4090, see the Electrical Characteristics table) |
NEC |
| 6436 |
2SC4154 |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 6437 |
2SC4155 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 6438 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
| 6439 |
2SC4167 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 6440 |
2SC4240 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 6441 |
2SC4258 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION |
Isahaya Electronics Corporation |
| 6442 |
2SC4273 |
HIGH VOLTAGE, HIGH SPEED WITCHING |
Fuji Electric |
| 6443 |
2SC4274 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING |
Fuji Electric |
| 6444 |
2SC4275 |
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING |
Fuji Electric |
| 6445 |
2SC4276 |
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING |
Fuji Electric |
| 6446 |
2SC4304 |
Silicon NPN epitaxial planar type transistor |
Mitsubishi Electric Corporation |
| 6447 |
2SC4356 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 6448 |
2SC4357 |
500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. |
Isahaya Electronics Corporation |
| 6449 |
2SC4483 |
NPN Epitaxial Planar Silicon Transistor Low-Frequency Amplifier, Electronic Governor Applications |
SANYO |
| 6450 |
2SC4524 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
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