| No. |
Part Name |
Description |
Manufacturer |
| 6511 |
2SD1899-Z |
TO-252 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 6512 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 6513 |
2SD2047 |
Ratigns and Caracteristics of Fuji Power Transistor |
Fuji Electric |
| 6514 |
2SD2047R |
Ratigns and Caracteristics of Fuji Power Transistor |
Fuji Electric |
| 6515 |
2SD2156 |
Silicon NPN Triple-Diffused Planar Type |
Matsushita Electric Works(Nais) |
| 6516 |
2SD400 |
Low-Frequency Power Amp, Electronic Governor Applications |
SANYO |
| 6517 |
2SD471 |
SILICON TRANSISTORS |
Micro Electronics |
| 6518 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 6519 |
2SD545 |
FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS |
SANYO |
| 6520 |
2SD570 |
Power Transistors |
Micro Electronics |
| 6521 |
2SD592 |
SILICON TRANSISTORS |
Micro Electronics |
| 6522 |
2SD592A |
SILICON TRANSISTORS |
Micro Electronics |
| 6523 |
2SD734 |
NPN Epitaxial Planar Silicon Transistor 1W AF Output, Electronic Governor, DC-DC Converter Applications |
SANYO |
| 6524 |
2SD833 |
HIGH POWER DARLINGTON |
Fuji Electric |
| 6525 |
2SD835 |
TRILPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE SWITCHING |
Fuji Electric |
| 6526 |
2SD863 |
NPN Epitaxial Planar Silicon Transistors Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications |
SANYO |
| 6527 |
2SD916 |
POWER DARLINGTON |
Fuji Electric |
| 6528 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 6529 |
2SJ128 |
MOS electric field effect power transistor |
NEC |
| 6530 |
2SJ128-Z |
MOS electric field effect power transistor |
NEC |
| 6531 |
2SJ132 |
MOS electric field effect power transistor |
NEC |
| 6532 |
2SJ132-Z |
MOS electric field effect power transistor |
NEC |
| 6533 |
2SJ133 |
MOS electric field effect power transistor |
NEC |
| 6534 |
2SJ133-Z |
MOS electric field effect power transistor |
NEC |
| 6535 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 6536 |
2SJ472-01L |
Power MOSFET |
Fuji Electric |
| 6537 |
2SJ472-01S |
Power MOSFET |
Fuji Electric |
| 6538 |
2SJ473-01L |
Power MOSFET |
Fuji Electric |
| 6539 |
2SJ473-01S |
Power MOSFET |
Fuji Electric |
| 6540 |
2SJ474-01L |
Power MOSFET |
Fuji Electric |
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