| No. |
Part Name |
Description |
Manufacturer |
| 6541 |
P4KE110CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 105 V, Vbr(max) = 116 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6542 |
P4KE120 |
97.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6543 |
P4KE120A |
102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6544 |
P4KE120A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 114 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6545 |
P4KE120C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 108 V, Vbr(max) = 132 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6546 |
P4KE120CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 114 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6547 |
P4KE130 |
105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6548 |
P4KE130A |
111.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6549 |
P4KE130A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6550 |
P4KE130C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 117 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6551 |
P4KE130CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6552 |
P4KE150 |
121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6553 |
P4KE150A |
128.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6554 |
P4KE150A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6555 |
P4KE150C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 135 V, Vbr(max) = 165 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6556 |
P4KE150CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6557 |
P4KE160 |
130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6558 |
P4KE160A |
136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6559 |
P4KE160A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6560 |
P4KE160C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 144 V, Vbr(max) = 176 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6561 |
P4KE160CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6562 |
P4KE170 |
138.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6563 |
P4KE170A |
145.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6564 |
P4KE170A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6565 |
P4KE170C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 153 V, Vbr(max) = 187 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6566 |
P4KE170CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6567 |
P4KE180 |
146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6568 |
P4KE180A |
154.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6569 |
P4KE180A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6570 |
P4KE180C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
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