| No. |
Part Name |
Description |
Manufacturer |
| 6601 |
P4KE530&550 |
TRANSZORB� Transient Voltage Suppressors Steady State Power 1W Peak Pulse Power 300W Breakdown Voltage 530, 550V |
Vishay |
| 6602 |
P4KENN |
TRANSZORB�Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 6603 |
P4KENNA |
TRANSZORB�Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 6604 |
P4KENNC |
TRANSZORB�Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 6605 |
P4KENNCA |
TRANSZORB�Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 6606 |
P4SMANNA |
Surface Mount TRANSZORB� Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 6607 |
P4SMANNCA |
Surface Mount TRANSZORB� Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 6608 |
P6KANN |
Automotive Transient Voltage Suppressors Breakdown Voltage 6.8 to 43V Peak Pulse Power 600W |
Vishay |
| 6609 |
P6KANNA |
Automotive Transient Voltage Suppressors Breakdown Voltage 6.8 to 43V Peak Pulse Power 600W |
Vishay |
| 6610 |
P6KE10 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 6611 |
P6KE100 |
81.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6612 |
P6KE100A |
85.50V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6613 |
P6KE100C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 90.0 V, Vbr(max) = 110 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6614 |
P6KE100CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 95.0 V, Vbr(max) = 105 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6615 |
P6KE10A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 6616 |
P6KE11 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 6617 |
P6KE110 |
89.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6618 |
P6KE110A |
94.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6619 |
P6KE110C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 99.0 V, Vbr(max) = 121 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6620 |
P6KE110CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 105.0 V, Vbr(max) = 116 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6621 |
P6KE11A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 6622 |
P6KE12 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 6623 |
P6KE120 |
97.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6624 |
P6KE120A |
102.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6625 |
P6KE120C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 108.0 V, Vbr(max) = 132 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6626 |
P6KE120CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 114.0 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 6627 |
P6KE12A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 6628 |
P6KE13 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 6629 |
P6KE130 |
105.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6630 |
P6KE130A |
111.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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