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Datasheets for AMIC

Datasheets found :: 12106
Page: | 217 | 218 | 219 | 220 | 221 | 222 | 223 | 224 | 225 |
No. Part Name Description Manufacturer
6601 KM416V1004A-6 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT Samsung Electronic
6602 KM416V1004A-7 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT Samsung Electronic
6603 KM416V1004A-8 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT Samsung Electronic
6604 KM416V1004A-F6 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT Samsung Electronic
6605 KM416V1004A-F7 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT Samsung Electronic
6606 KM416V1004A-F8 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT Samsung Electronic
6607 KM416V1004A-L6 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT Samsung Electronic
6608 KM416V1004A-L7 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT Samsung Electronic
6609 KM416V1004A-L8 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT Samsung Electronic
6610 KM416V1004C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
6611 KM416V1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
6612 KM416V1004CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
6613 KM416V1004CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
6614 KM416V1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
6615 KM416V1004CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
6616 KM416V1004CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
6617 KM416V1004CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
6618 KM416V1004CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
6619 KM416V1004CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
6620 KM416V1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
6621 KM416V1004CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
6622 KM416V1004CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
6623 KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
6624 KM416V1200BJ-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
6625 KM416V1200BJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
6626 KM416V1200BJ-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
6627 KM416V1200BJL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
6628 KM416V1200BJL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
6629 KM416V1200BJL-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
6630 KM416V1200BT-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic


Datasheets found :: 12106
Page: | 217 | 218 | 219 | 220 | 221 | 222 | 223 | 224 | 225 |



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