No. |
Part Name |
Description |
Manufacturer |
6601 |
KM416V1004A-6 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
6602 |
KM416V1004A-7 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
6603 |
KM416V1004A-8 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
6604 |
KM416V1004A-F6 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
6605 |
KM416V1004A-F7 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
6606 |
KM416V1004A-F8 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
6607 |
KM416V1004A-L6 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
6608 |
KM416V1004A-L7 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
6609 |
KM416V1004A-L8 |
1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
Samsung Electronic |
6610 |
KM416V1004C |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
6611 |
KM416V1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
6612 |
KM416V1004CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
6613 |
KM416V1004CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
6614 |
KM416V1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
6615 |
KM416V1004CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
6616 |
KM416V1004CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
6617 |
KM416V1004CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
6618 |
KM416V1004CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
6619 |
KM416V1004CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
6620 |
KM416V1004CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
6621 |
KM416V1004CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
6622 |
KM416V1004CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
6623 |
KM416V1200B |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
6624 |
KM416V1200BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
6625 |
KM416V1200BJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
6626 |
KM416V1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
6627 |
KM416V1200BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
6628 |
KM416V1200BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
6629 |
KM416V1200BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
6630 |
KM416V1200BT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
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