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Datasheets for AMIC

Datasheets found :: 12106
Page: | 218 | 219 | 220 | 221 | 222 | 223 | 224 | 225 | 226 |
No. Part Name Description Manufacturer
6631 KM416V1200BT-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
6632 KM416V1200BT-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
6633 KM416V1200BTL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
6634 KM416V1200BTL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
6635 KM416V1200BTL-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
6636 KM416V1200C 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
6637 KM416V1200CJ-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
6638 KM416V1200CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
6639 KM416V1200CJL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
6640 KM416V1200CJL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
6641 KM416V1200CT-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
6642 KM416V1200CT-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
6643 KM416V1200CTL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
6644 KM416V1200CTL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
6645 KM416V1204C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
6646 KM416V1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
6647 KM416V1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
6648 KM416V1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
6649 KM416V1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
6650 KM416V1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
6651 KM416V1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
6652 KM416V1204CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
6653 KM416V1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
6654 KM416V1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
6655 KM416V1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
6656 KM416V1204CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
6657 KM416V1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
6658 KM416V254D 256K x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
6659 KM416V254DJ-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period Samsung Electronic
6660 KM416V254DJ-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period Samsung Electronic


Datasheets found :: 12106
Page: | 218 | 219 | 220 | 221 | 222 | 223 | 224 | 225 | 226 |



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