No. |
Part Name |
Description |
Manufacturer |
661 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
662 |
2N5838 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
663 |
2N5839 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
664 |
2N5840 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
665 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
666 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
667 |
2N5913 |
Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers |
RCA Solid State |
668 |
2N5914 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
669 |
2N5915 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
670 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
671 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
672 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
673 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
674 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
675 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
676 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
677 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
678 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
679 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
680 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
681 |
2N6027 |
Programmable unijunction transistor. |
General Electric Solid State |
682 |
2N6028 |
Programmable unijunction transistor. |
General Electric Solid State |
683 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
684 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
685 |
2N6043 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
686 |
2N6044 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
687 |
2N6045 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
688 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
689 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
690 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
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